Electronic Ceramics RSiC For Firing Electrical Elements
PRODUCT DESCRIPTION
RSiC (Recrystallized Silicon Carbide) ceramics are revolutionizing the field of firing electrical elements manufacturing through their exceptional physical and chemical properties. This advanced material enables breakthrough innovations in firing electrical elements, particularly for high-performance electronic ceramics and semiconductor devices. The unique characteristics of RSiC provide unprecedented control over the firing environment, ensuring optimal results for sensitive electrical elements during critical thermal processing stages.
Characteristics Of RSiC In Electronic Elements Firing
Ultra-High Temperature Precision Control
Long-term stable operation at 1600°C with short-term capability to 1800°C;
Superior Thermal Field Uniformity
Adjustable thermal conductivity (1.2-45 W/mK) through optimized porosity design;
Rapid sintering capability: ±0.5°C wafer surface variation at 100°C/min heating rates (MLCC electrode co-firing);
Precision sintering: ±0.2°C thermal field stability at 5°C/min heating rates (LTCC substrate processing);
Absolute Process Purity：Contamination-free environment for sensitive electronic ceramics;
Extended Service Life
MAIN PARAMETER
High Temperature Kiln Equipment Industry | RSiC |
SiC Content (%) | ≥99% |
Bulk Density (g/cm3) | 2.65~2.75 |
Apparent Porosity (%) | <17 |
Room temperature strength (MPa) | 90~100 |
Strengthat 1300℃(MPa) | 100-110 |
Elasticity modulus at 20℃ | 240 |
Thermal Conductivity At 1200℃(W/mk) | 36 |
Thermal Expansion x10-6/℃ | 4.6 |
Max Using Temperature（℃） | 1650℃ |
Hardness At 20°C (Kg/mm2) | 2000 |
Fracture Toughness At 20°(MpaxM1/2) | 2.0 |
APPLICATION
Electronic Ceramics Manufacturing
Multi-layer ceramic capacitors (MLCC): RSiC sintering plates prevent substrate-kiln reactions;
Advanced electronic ceramics processing with guaranteed purity and thermal stability;
Power Electronics Packaging
SiC MOSFET silver sintering: CTE-matched RSiC fixtures (4.5×10⁻⁶/°C) minimize thermal stress during 250°C pressure sintering;
Optimized for firing electrical elements in power device manufacturing;
Advanced Packaging Solutions
Through Glass Via (TGV) wafer-level packaging: RSiC substrates maintain <1μm/100mm flatness during 850°C glass reflow;
Superior performance for precision electrical elements packaging;
Support Components
Lightweight sintering push plates with maintained flexural strength;
Precision wafer carriers (200mm/300mm specifications);
Atmosphere control elements: Porous RSiC (10-50μm pores) with ±2% H₂ permeation uniformity;
RSiC ceramics represent the gold standard for firing electrical elements, providing the precision, purity, and performance required for next-generation electronic device manufacturing.
PACKING
OUR ADVANTAGE
As a full industry chain service provider of silicon carbide (SiC), Riseport Global Traders Ltd.(Shenyang) fully integrates upstream and downstream resources in its business model and value chain design, forming a differentiated foreign trade platform competitiveness.We combine customized service solutions with an efficient, technology-driven production system to guarantee superior quality and swift responsiveness. This enables us to deliver seamless and high-quality global service, ensuring our clients' success in international markets.
